advanced power n-channel mosfet with schottky electronics corp. diode simple drive requirement bv dss 30v good recovery time r ds(on) 9m fast switching performance i d 13a rohs compliant & halogen-free description absolute maximum ratings@t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a v ka v i f @t a =25 a i fm a w w t stg t j symbol value unit rthj-a 50 /w rthj-a 60 /w data and specifications subject to change without n otice 201501072 halogen-free product 1 parameter 10.6 pulsed drain current 1 50 maximum thermal resistance, junction-ambient 3 (mosfet) schottky reverse voltage forward current 30 + 20 13 maximum thermal resistance, junction-ambient 3 (schottky) drain-source voltage gate-source voltage drain current, v gs @ 10v 3 drain current, v gs @ 10v 3 30 ap4813gsm-hf rating 1 p d @t a =25 pulsed diode forward current 25 -55 to 150 operating junction temperature range -55 to 150 max power dissipation (schottky) 2.0 storage temperature range parameter max power dissipation (mosfet) 2.5 thermal data s s s g d d d d so-8 g d s schottky diode ap4813 series are from advanced power innovated design and silicon process technology to achieve the lowest possible o n- resistance and fast switching performance. it provides the designer with an extreme efficient device for use in a wide range of power applications. the so-8 package is widely preferred for all commercial-ind ustrial surface mount applications using infrared reflow techniqu e and suited for voltage conversion or switch application s.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =12a - - 9 m v gs =4.5v, i d =8a - - 15 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =8a - 20 - s i dss drain-source leakage current v ds =30v, v gs =0v - - 100 ua drain-source leakage current (t j =70 o c) v ds =24v, v gs =0v - - 1 ma i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =8a - 11.5 18 nc q gs gate-source charge v ds =15v - 2.5 - nc q gd gate-drain ("miller") charge v gs =4.5v - 7 - nc t d(on) turn-on delay time v ds =15v - 9 - ns t r rise time i d =1a - 7 - ns t d(off) turn-off delay time r g =3.3 ,v gs =10v - 23 - ns t f fall time r d =15 - 8 - ns c iss input capacitance v gs =0v - 730 1170 pf c oss output capacitance v ds =25v - 205 - pf c rss reverse transfer capacitance f=1.0mhz - 150 - pf r g gate resistance f=1.0mhz - 1.5 - source-drain diode symbol parameter test conditions min. typ. max. units v sd diode+schottky forward on voltage 2 i s =1.0a, v gs =0v - 0.48 0.5 v t rr body diode+schottky reverse recovery time i s =8a, v gs =0 v , - 20 - ns q rr body diode+schottky reverse recovery charge di/dt=100a/s - 9 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10 sec. this product is sensitive to electrostatic discharg e, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized . apec does not assume any liability arising out of t he application or use of any product or circuit des cribed herein; neither does it convey any license under it s patent rights, nor the rights of others. apec reserves the right to make changes without fur ther notice to any products herein to improve reliability, function or design. 2 ap4813gsm-hf
ap4813gsm-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate volta ge fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 10 20 30 40 50 0 1 2 3 4 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 7.0v 6.0v 5.0v v g =4.0v 0 10 20 30 40 50 0 1 2 3 v ds , drain-to-source voltage (v) i d , drain current (a) 10v 7.0v 6.0v 5.0v v g = 4.0v t a = 150 o c 6 8 10 12 14 16 2 4 6 8 10 v gs , gate-to-source voltage (v) r ds(on) (m ? ) i d = 8 a t a =25 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = 12 a v g =10v 0.50 0.75 1.00 1.25 1.50 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) 0 4 8 12 16 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c mosfet+schottky
ap4813gsm-hf fig 7. gate charge characteristics fig 8. typical capacitance characteristic s fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 1 2. gate charge waveform 4 q v g 4.5v q gs q gd q g charge 0 400 800 1200 1600 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss 0 2 4 6 8 10 0 4 8 12 16 20 24 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds = 15 v v ds = 18 v v ds = 24 v i d = 8 a 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja = 125 /w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) 100us 1ms 10ms 100ms 1s dc t a =25 o c single pulse t d(on) t r t d(off) t f v ds v gs 10% 90% operation in this area limited by r ds(on)
ap4813gsm-hf marking information 5 4813gsm ywwsss part number date code (ywwsss) y last digit of the year ww week sss sequence package code meet rohs requirement for low voltage mosfet only
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